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DCR1008SF
DCR1008SF
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4244-3.0 DS4244-4.0 July 2001
FEATURES
s Double Side Cooling s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 3600V 1051A 15000A 1000V/s 200A/s
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC Motor Control s Welding s Battery Chargers
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 3600 3500 3400 3300 3200 Conditions
DCR1008SF36 DCR1008SF35 DCR1008SF34 DCR1008SF33 DCR1008SF32
Tvj = 0 to 125C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Outline type code: F See Package Details for further information. Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1008SF35 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DCR1008SF
CURRENT RATINGS
Tcase = 60C unless state dotherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1051 1650 1508 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 753 1182 1018 A A A
CURRENT RATINGS
Tcase = 60C unless state dotherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 830 1300 1160 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 565 890 770 A A A
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DCR1008SF
SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 12.0 0.72 x 106 15.0 1.125 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 19.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 18.0 125 125 22.0
o
Min. dc Anode dc -
Max. 0.022 0.038 0.052 0.004 0.008 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
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DCR1008SF
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. From 67% VDRM, IT = 1500A, Repetitive 50Hz Gate source1.5A tr 0.5s. Tj = 125oC. Non-repetitive At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 Rise time 0.5s, Tj = 25oC Tj = 25oC, VD = 5V Tj = 25oC, Rg-k = Typ. 350 230 Max. 150 1000 75 200 1.1 0.57 2.0 900 600 Units mA V/s A/s A/s V m s mA mA s
dI/dt
Rate of rise of on-state current
VT(TO) rT tgd IL IH tq
Threshold voltage On-state slope resistance Delay time Latching current Holding current
IT = 3000A, tp = 1ms, Tj = 125C,
Turn-off time VRM = 900V, dIRR/dt = 5A/s, VDR = 2800V, dVDR/dt = 20V/s linear 500
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table. fig. 4 Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 3.5 200 0.25 30 0.25 5 30 150 10 Units V mA V V V V A W W
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DCR1008SF
CURVES
4000 Measured under pulse conditions
3500 6 phase 3000 3 phase Half wave d.c.
Instantaneous on-state current, IT - (A)
3000
Mean power dissipation - (W)
2500
2000
2000
Tj = 125C
1500
1000
1000
500
0 1.0
2.0 3.0 Instantaneous on-state voltage, VT - (V)
4.0
00
400 800 1200 Mean on-state current, IT(AV) - (A)
1600
Fig.2 Maximum (limit) on-state characteristics VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT Where A = 1.458475 B = -0.098355 C = 0.000484 D = 0.012565 these values are valid for Tj = 125C for IT 500A to 4000A
Fig.3 Dissipation curves
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DCR1008SF
100000
10000
IT QS tp = 1.6ms dI/dt IRM
100
Pulse width s 100 200 500 1ms 10ms
Frequency Hz 50 150 150 150 150 20 100 150 150 150 50 400 150 125 100 25 -
Table gives pulse power PGM in Watts
0W 10 W 50
W 20 W 10 5W
Total stored charge, QS - (C)
10000 Max. QS Min. QS Max. IRR Min. IRR
1000
Reverse recovery current, IRR - (A)
Gate trigger voltage, VGT - (V)
10
pe Up
1
r lim
it 9
5%
1000
100
Tj = 125C
VGD
Lo
Conditions: Tj = 125C, IT = 3000A 100 0.1 1.0 10 10 100
0.1 0.001 0.01
r we
lim
it 5
%
0.1
Tj = 25C Tj = -40C
Region of certain triggering
1
10
Rate of decay of on-state current, dI/dt - (A/s)
Gate trigger current, IGT - (A)
Fig.4 Stored charge
0.1
Fig.5 Gate characteristics
40 I2t = I2 x t 2
Peak half sine wave on-state current - (kA)
Anode side cooled
Conduction
Effective thermal resistance Junction to case C/W Double side 0.022 0.024 0.026 0.027 Anode side 0.038 0.040 0.042 0.043
Thermal Impedance - Junction to case - (C/W)
d.c. Halfwave 3 phase 120 6 phase 60
30
Double side cooled 0.01
20
700 650
I2t value - (A2s x 103)
600 10 I2t 550 500
0.001 0.001
0.01
0.1 Time - (s)
1.0
10
0 1 ms
10
1
2 3 45
10
450 20 30 50
Cycles at 50Hz Duration
Fig.6 Transient thermal impedance - junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125C)
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DCR1008SF
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole O3.6x2.0 deep (in both electrodes)
Cathode tab
Cathode O76 max O48 nom
O1.5 Gate
O48 nom
Anode
Nominal weight: 450g Clamping force: 19.5kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: F
27.0 25.4
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DCR1008SF
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4244-4 Issue No. 4.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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